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670nm Single Emitter Diode Laser High Electro - Optical Effiency 300mw Power

Hi-Tech Optoelectronics Co., Ltd
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    Buy cheap 670nm Single Emitter Diode Laser High Electro - Optical Effiency 300mw Power from wholesalers
     
    Buy cheap 670nm Single Emitter Diode Laser High Electro - Optical Effiency 300mw Power from wholesalers
    • Buy cheap 670nm Single Emitter Diode Laser High Electro - Optical Effiency 300mw Power from wholesalers

    670nm Single Emitter Diode Laser High Electro - Optical Effiency 300mw Power

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    Brand Name : HTOE
    Model Number : LDM-0670-300m-*3
    Price : Negotiable
    Payment Terms : T/T
    Supply Ability : 1000 pcs per month
    Delivery Time : 10-20 working days
    • Product Details
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    670nm Single Emitter Diode Laser High Electro - Optical Effiency 300mw Power

    300mW Output Power 670nm Wavelength Packaged Single Emitter Diode Laser

    670nm Single Emitter Diode Laser High Electro - Optical Effiency 300mw Power

    As one of HTOE LDM series packaged single emitters, LDM-0670-300m-*3 is Fabry-Perot cavity semiconductor laser diode based on Quantum-well epitaxy and ridge waveguide structure design. HTOE packaged single emitters provide excellent reliability and performance. Center wavelength includes 635nm, 650nm, 670nm, 785nm, 808nm, 830nm, 9xxnm and 1064 nm. Package designs include TO mounts, CoS mounts, C-mounts and F-mounts. Provide beam shaping services like fast-axis compression according to customer demands


    A laser diode is electrically a PIN diode. The active region of the laser diode is in the intrinsic (I) region, and the carriers (electrons and holes) are pumped into that region from the N and P regions respectively. While initial diode laser research was conducted on simple P-N diodes, all modern lasers use the double-hetero-structure implementation, where the carriers and the photons are confined in order to maximize their chances for recombination and light generation.


    Features

    • 300m watt output power
    • 670nm center wavelength
    • Beam shaping services
    • C-mount and 3mm in TO package options
    • High electro-optical effiency
    • High reliablity

    Parameters(20℃)

    670nm Single Emitter Diode Laser High Electro - Optical Effiency 300mw Power

    C-Mount/ TOØ3 Packaged Single Emitter
    ItemParameterUnitLDM-0670-300m-*3
    Min.TypicalMax.
    Optical ParameterOutput powermW-300-
    Lasing Wavelengthnm660670680
    Spectral Widthnm-1.02.0
    Emitting Area widthµm-100-
    Temperature Coefficientnm/℃-0.30-
    Fast Axis Divergencedeg-3438
    Slow Axis Divergencedeg-710
    Electrical ParameterSlope EfficiencyW/A0.90--
    Threshold CurrentA-0.500.60
    Operating CurrentA-0.801.00
    Operating VoltageV-2.002.30
    OthersPackage-C-Mount/TOØ3
    Operating Temperature10 ~ 30
    Storage Temperature-10 ~ 60

    Package Information

    670nm Single Emitter Diode Laser High Electro - Optical Effiency 300mw Power

    C-Mount Package

    TOØ3 Package


    Function Curve

    670nm Single Emitter Diode Laser High Electro - Optical Effiency 300mw Power

    P-I-V Curve Spectral Curve


    Notice670nm Single Emitter Diode Laser High Electro - Optical Effiency 300mw Power

    1. Item model notice: LDM (Item model), 0670 (Center wavelength), 300m (Output power), *3 (Heat sink structure and item width).
    2. Data in the sheet are all based on C-mount package heat sink testing.
    3. Please store or use the LD under dry and air flow ambient.To avoid any situation of condensation which will damage the LD.

    4. Working under high temperature will increase the threshold current and decrease the efficiency conversion,speed up the aging of the LD.

    5. The exceed power output will speed up the aging of the LD.

    6. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.

    Quality 670nm Single Emitter Diode Laser High Electro - Optical Effiency 300mw Power for sale
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