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Material Processing Single Emitter Laser Diode Working In Grounding Condition

Hi-Tech Optoelectronics Co., Ltd
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    Buy cheap Material Processing Single Emitter Laser Diode Working In Grounding Condition from wholesalers
     
    Buy cheap Material Processing Single Emitter Laser Diode Working In Grounding Condition from wholesalers
    • Buy cheap Material Processing Single Emitter Laser Diode Working In Grounding Condition from wholesalers

    Material Processing Single Emitter Laser Diode Working In Grounding Condition

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    Brand Name : HTOE
    Model Number : LDM-0830-001W-*2
    Price : Negotiable
    Payment Terms : T/T
    Supply Ability : 1000 pcs per month
    Delivery Time : 10-20 working days
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    Material Processing Single Emitter Laser Diode Working In Grounding Condition

    830nm Wavelength 1 watt Output Power Packaged Single Emitter Diode Laser

    Material Processing Single Emitter Laser Diode Working In Grounding Condition

    LDM-0830-001W-*2 is HTOE LDM series packaged single emitter diode lasers. They are Fabry-Perot cavity semiconductor lasers based on Quantum-well epitaxy and ridge waveguide structure design. HTOE packaged single emitters provide excellent reliability and performance. Package designs include TO mounts, CoS mounts, C-mounts and F-mounts. Center wavelength includes 635nm, 650nm, 670nm, 785nm, 808nm, 830nm, 915nm, 940nm, 980nm and 1064 nm. Provide beam shaping services like fast-axis compression according to customer demands


    Features:

    • 2 package options: CoS and C-Mount
    • 830nm center wavelength
    • 1 watt output power
    • High electro-optical effiency
    • High reliablity

    Applications

    • Material processing
    • Illumination
    • DPSS laser pumping

    Parameters(20℃)


    CoS/C-Mount Packaged Single Emitter
    ParameterUnitLDM-0830-001W-*2
    Optical ParameterOutput powerW1
    Lasing Wavelengthnm830±10
    Spectral Widthnm≤3
    Emitting Area widthµm50
    Temperature Coefficientnm/℃0.30
    Fast Axis Divergencedeg<40
    Slow Axis Divergencedeg<10
    Electrical ParameterSlope EfficiencyW/A≥1.03
    Threshold CurrentA≤0.30
    Operating CurrentA≤1.30
    Operating VoltageV≤2.00
    OthersPackage-CoS/C-Mount
    Operating Temperature15 ~ 30
    Storage Temperature-40 ~ 60
    Welding Temperature≤260
    Material Processing Single Emitter Laser Diode Working In Grounding Condition
    Package InformationMaterial Processing Single Emitter Laser Diode Working In Grounding Condition

    CoS Package


    C-Mount Package


    Function Curve

    Material Processing Single Emitter Laser Diode Working In Grounding Condition

    P-I-V Curve Spectral Curve


    NoticeMaterial Processing Single Emitter Laser Diode Working In Grounding Condition


    1. Item model notice: LDM (Item model), 0830 (Center wavelength), 001W (Output power), *2 (Heat sink structure and item width).

    2. Data in the sheet are all based on C-mount package heat sink testing.

    3. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.

    4. Laser diodes are ESD sensitive device, anti-static measures should be prepared. Before pick up the case, make sure you get a good grounding condition, otherwise the laser tube will be easily to breakdown by the static electricity, resulting in the laser tube failure. Wear anti-static wrist strap when working with the laser.

    5. The laser tube should be kept or working in a dry environment to prevent condensation, condensation may damage the laser tube.
    6. At high temperatures, it will increase the threshold current, lower the efficiency and accelerate the aging of the laser tube.
    7. When the output power higher than the specified parameters, it will accelerate the aging of the laser tube.


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