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980 Nm Packaged PIN High Power Pulsed Laser Diode Single Emitter TO Can

Hi-Tech Optoelectronics Co., Ltd
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    Buy cheap 980 Nm Packaged PIN High Power Pulsed Laser Diode Single Emitter TO Can from wholesalers
     
    Buy cheap 980 Nm Packaged PIN High Power Pulsed Laser Diode Single Emitter TO Can from wholesalers
    • Buy cheap 980 Nm Packaged PIN High Power Pulsed Laser Diode Single Emitter TO Can from wholesalers

    980 Nm Packaged PIN High Power Pulsed Laser Diode Single Emitter TO Can

    Ask Lasest Price
    Brand Name : HTOE
    Model Number : LDMP-0980-005W-*4
    Price : Negotiable
    Payment Terms : T/T
    Supply Ability : 1000 pcs per month
    Delivery Time : 10-20 working days
    • Product Details
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    980 Nm Packaged PIN High Power Pulsed Laser Diode Single Emitter TO Can

    980 nm Packaged Laser Diode , ms pulse TO Package Single Emitter Diode Laser

    980 Nm Packaged PIN High Power Pulsed Laser Diode Single Emitter TO Can

    LDMP-0980-005W-*4 series packaged single emitters are Fabry-Perot cavity semiconductor lasers based on Quantum-well epitaxy and ridge waveguide structure design. With 20 years' experience in laser diode design and production, HTOE packaged single emitters provide excellent reliability and performance.


    A laser diode is electrically a PIN diode. The active region of the laser diode is in the intrinsic (I) region, and the carriers (electrons and holes) are pumped into that region from the N and P regions respectively. While initial diode laser research was conducted on simple P-N diodes, all modern lasers use the double-hetero-structure implementation, where the carriers and the photons are confined in order to maximize their chances for recombination and light generation.


    Advantages

    • 980nm Center wavelength
    • 5.6mm in TO Package design
    • Provide beam shaping services like fast-axis compression according to customer demands
    • 20 years' experience in packaged laser diode design and production

    Parameters(20℃)

    980 Nm Packaged PIN High Power Pulsed Laser Diode Single Emitter TO Can

    TOØ56 Packaged Single Emitter
    ItemParameterUnitLDMP-0980-005W-*4
    Min.TypicalMax.
    Optical ParameterOutput powerW-5 (ms pulse)-
    Lasing Wavelengthnm970980990
    Spectral Widthnm-1.803.00
    Emitting Area widthµm-150-
    Temperature Coefficientnm/℃-0.3-
    Fast Axis Divergencedeg (cw-5w)-2530
    Slow Axis Divergencedeg (cw-5w)-1015
    Pulse Widthms010-
    Pulse FrequencyHz010-
    Electrical ParameterSlope EfficiencyW/A0.901.00-
    Threshold CurrentA-0.501.00
    Operating CurrentA-5.505.80
    Operating VoltageV-2.203.00
    OthersPackage-TOØ56
    Operating Temperature10 ~ 50
    Storage Temperature-10 ~ 60

    Package Information

    980 Nm Packaged PIN High Power Pulsed Laser Diode Single Emitter TO Can


    TOØ56 Package


    Function Curve

    980 Nm Packaged PIN High Power Pulsed Laser Diode Single Emitter TO Can

    P-I-V Curve


    Notice980 Nm Packaged PIN High Power Pulsed Laser Diode Single Emitter TO Can


    1. Item model notice: LDMP (Item model), 0980 (Center wavelength), 005W (Output power), *4 (Heat sink structure and item width).

    2. Data in the sheet are all based on TOØ56 (socket, capless) package testing under 10ms 10Hz pulse condition.

    3. Please store or use the LD under dry and air flow ambient.To avoid any situation of condensation which will damage the LD.

    4. Working under high temperature will increase the threshold current and decrease the efficiency conversion,speed up the aging of the LD.

    5. The exceed power output will speed up the aging of the LD.

    6. Laser diode belongs to electrostatic sensitive components. Should deal with anti-electrostatic method. To touch the LD directly unless human-body is well connect with ground. Otherwise the LD will be burned easily. To wear anti-electrostatic wrist band is necessary.

    7. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.


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